The Secco LM358 is composed of two independent, high-gain, internal frequency compensated operational amplifiers, specially designed to operate from a single power supply in a wide voltage range. When the 3v to 26v difference between two power supplies is met, it is also applicable to the operation of separating power supplies When the 3v to […]

01 Repeated short circuit test   Test description: Short-circuit the output of the module under various input and output states, the module should be able to achieve protection or retraction, and short-circuit repeatedly for many times. After the fault is eliminated, the module should automatically resume normal operation. testing method: No-load to short-circuit: Within the […]

An engineer once told me that he never looked at the first page of the MOSFET data sheet, because the “practical” information only appeared after the second page. In fact, every page on the MOSFET data sheet contains valuable information for the designer. But people don’t always figure out how to interpret the data provided […]

Several basic principles of MOS design selection Suggested basic steps for primary selection: 01 Voltage stress In power circuit applications, the choice of drain-source voltage VDS is often considered first. The basic principle here is that the maximum peak drain-source voltage in the actual operating environment of the MOSFET is not greater than 90% of […]

01 Basic principles of Miller platform formation The MOSFET gate driving process can be simply understood as the charging and discharging process of the driving source to the MOSFET’s input capacitance (mainly the gate-source capacitance Cgs); when Cgs reaches the threshold voltage, the MOSFET enters the on state; when the MOSFET is turned on Later, […]